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| BAV 70S Silicon Switching Diode Array * For high speed switching applications * Common cathode * Internal (galvanic) isolated Diodes Arrays in one package Type BAV 70S Marking Ordering Code A4s Q62702-A1097 Pin Configuration 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total Power dissipation Symbol Values 70 70 200 4.5 250 mA A mW 150 - 65 ... + 150 530 260 C Unit V VR VRM IF IFS Ptot Tj Tstg RthJA RthJS TS = 85 C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-28-1996 BAV 70S Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit V(BR) 70 - V mV 715 855 1000 1250 A 2.5 30 50 I(BR) = 100 A Forward voltage VF IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current IR VR = 70 V, TA = 25 C VR = 25 V, TA = 150 C VR = 70 V, TA = 150 C AC characteristics per Diode Diode capacitance CD 1.5 pF ns 6 VR = 0 V, f = 1 MHz Reverse recovery time trr IF = 10 mA, IR = 10 mA, RL = 100 trr measured at 1 mA Semiconductor Group 2 Nov-28-1996 BAV 70S Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25C 300 mA IF 200 TA 150 TS 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 3 Nov-28-1996 BAV 70S Forward voltage VF = f (TA) Reverse current IR = f (TA) Semiconductor Group 4 Nov-28-1996 |
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